p-channel enhancement mode field AO4705 symbol unit s v ds v v gs v t a =25c t a =70c i dm v ka v t a =25c t a =70c i fm t a =25c t a =70c t j , t stg c symbol unit s r jl r jl pulsed drain current b junction and storage temperature range 3 w schottky reverse voltage 30 2 2 power dissipation max c/w c/w mosfet -30 25 -10 -8 -60 3 i f 30 thermal characteristics schottky 40 30 28 54 continuous drain current a gate-source voltage schottky drain-source voltage parameter -55 to 150 a absolute maximum ratings t a =25c unless otherwise noted p d i d 5 a 3.5 30 continuous forward current a parameter: thermal characteristics mosfet maximum junction-to-ambient a t 10s -55 to 150 typ maximum junction-to-ambient a steady-state 75 maximum junction-to-lead c steady-state 21 40 maximum junction-to-ambient a t 10s r ja maximum junction-to-ambient a steady-state 75 maximum junction-to-lead c steady-state pulsed forward current b 67 25 36 r ja features v ds (v) = -30v i d = -10a (v gs = -10v) r ds(on) < 14m ? (v gs = -20v) r ds(on) < 16m ? (v gs = -10v) schottky v ds (v) = 30v, i f = 5a, v f <0.52v@3a the AO4705 uses advanced trench technology to provide excellent r ds(on) and low gate charge. a schottky diode is provided to facilitate the implementation of non-synchronous dc-dc converters. standard product AO4705 is pb-free (meets rohs & sony 259 specifications). AO4705l is a green product ordering option. AO4705 and AO4705l are electrically identical. g d s a k g s s a d/k d/k d/k d/k 1 2 3 4 8 7 6 5 soic-8 effect transistor with schottky diode general description www.freescale.net.cn 1 / 5
AO4705 symbol min typ max units bv dss -30 v -1 t j =55c -5 i gss 100 na v gs(th) -1.7 -2.5 -3 v i d(on) 60 a 13 16 t j =125c 16 21 10.7 14 m ? 25 m ? g fs 26 s v sd -0.72 -1 v i s -4.2 a c iss 2076 pf c oss 503 pf c rss 302 pf r g 2 ? q g 37.2 nc q gs 7nc q gd 10.4 nc t d(on) 12.4 ns t r 8.2 ns t d(off) 25.6 ns t f 12 ns t rr 33 ns q rr 23 nc schottky parameters v f 0.48 0.52 v 0.07 0.15 4.2 20 15 60 c t 120 pf this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arisin g out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice ma v r =24v, t j =125c v r =24v, t j =150c junction capacitance v r =15v forward voltage drop i f =3.0a i rm maximum reverse leakage current v r =24v body diode reverse recovery time body diode reverse recovery charge i f =-10a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =-250 a, v gs =0v v gs =-4.5v, i d =-10a v gs =-10v, v ds =-5v v gs =-10v, i d =-10a reverse transfer capacitance electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss a gate threshold voltage v ds =v gs i d =-250 a v ds =-24v, v gs =0v v ds =0v, v gs =25v zero gate voltage drain current gate-body leakage current r ds(on) static drain-source on-resistance forward transconductance diode forward voltage m ? v gs =-20v, i d =-10a i s =-1a,v gs =0v v ds =-5v, i d =-10a i f =-10a, di/dt=100a/ s v gs =0v, v ds =-15v, f=1mhz switching parameters total gate charge v gs =-10v, v ds =-15v, i d =-10a gate source charge gate drain charge turn-on rise time turn-off delaytime v gs =-10v, v ds =-15v, r l =1.0 ? , r gen =3 ? gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev 4: june 2005 www.freescale.net.cn 2 / 5
AO4705 typical electrical and thermal characteristics 0 10 20 30 40 50 012345 -v ds (volts) fig 1: on-region characteristics -i d (a) v gs =-4v -4.5v -5v -5.5v -10v 0 5 10 15 20 25 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -v gs (volts) figure 2: transfer characteristics -i d (a) 5 10 15 20 25 0 5 10 15 20 25 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =-20v v gs =-10v 0 10 20 30 40 50 60 45678910 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =-5v v gs =-6v v gs =-20v i d =-10a 25c 125c i d =-10a -6v -8v v gs =-10v www.freescale.net.cn 3 / 5
AO4705 typical electrical and thermal characteristics 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 25 30 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c t a =25c v ds =-15v i d =-10a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =40c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 s www.freescale.net.cn 4 / 5
AO4705 typical electrical and thermal characteristics: schottk y 0.001 0.01 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 v f (volts) figure 12: schottky forward characteristics i f (amps) 0 100 200 300 400 500 600 0 5 10 15 20 25 30 v ka (volts) figure 13: schottky capacitance characteristics capacitance (pf) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 0 25 50 75 100 125 150 175 temperature (c) figure 15: schottky leakage current vs. junction temperature leakage current (a) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 25 50 75 100 125 150 175 temperature (c) v f (volts) figure 14: schottky forward drop vs. junction temperature single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =40c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse f = 1mhz i f =3a 25c i f =5a v r =24v 125c t on t p d www.freescale.net.cn 5 / 5
|
